III-Nitride on Silicon Photonic Circuits

被引:0
|
作者
Boucaud, P. [1 ]
Roland, I. [1 ]
Zeng, Y. [1 ]
Tabataba-Vakili, F. [1 ]
El Kurdi, M. [1 ]
Sauvage, S. [1 ]
Checoury, X. [1 ]
Gromovyi, M. [2 ]
Rennesson, S. [2 ]
Semond, F. [2 ]
Duboz, J. -Y. [2 ]
de Micheli, M. [3 ]
Selles, J. [4 ]
Brimont, C. [4 ]
Guillet, T. [4 ]
Gayral, B. [5 ,6 ]
机构
[1] Univ Paris Saclay, Univ Paris Sud, CNRS, Ctr Nanosci & Nanotechnol, Batiment 220,Rue Andre Ampere, F-91405 Orsay, France
[2] Univ Cote Azur, CNRS, CRHEA, Rue Bernard Gregory, F-06560 Valbonne, France
[3] Univ Nice Sophia Antipolis, Inst Phys Nice, F-06108 Nice, France
[4] Univ Montpellier, CNRS, Lab Charles Coulomb L2C, UMR 5221, F-34905 Montpellier, France
[5] CEA, INAC, PHELIQS, Nanophys & Semicond Grp, F-38000 Grenoble, France
[6] Univ Grenoble Alpes, F-38000 Grenoble, France
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暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present recent progress achieved with III-nitride photonic circuits epitaxially grown on silicon(111). The photonic circuits embed two-dimensional photonic crystals and microdisk resonators coupled to suspended waveguides. We discuss the linear and nonlinear response of the resonators through second and third harmonic generation.
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页码:49 / 50
页数:2
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