III-Nitride on Silicon Photonic Circuits

被引：0

作者：

Boucaud, P. ^{[1
]}

Roland, I. ^{[1
]}

Zeng, Y. ^{[1
]}

Tabataba-Vakili, F. ^{[1
]}

El Kurdi, M. ^{[1
]}

Sauvage, S. ^{[1
]}

Checoury, X. ^{[1
]}

Gromovyi, M. ^{[2
]}

Rennesson, S. ^{[2
]}

Semond, F. ^{[2
]}

Duboz, J. -Y. ^{[2
]}

de Micheli, M. ^{[3
]}

Selles, J. ^{[4
]}

Brimont, C. ^{[4
]}

Guillet, T. ^{[4
]}

Gayral, B. ^{[5
,6
]}

机构：

[1] Univ Paris Saclay, Univ Paris Sud, CNRS, Ctr Nanosci & Nanotechnol, Batiment 220,Rue Andre Ampere, F-91405 Orsay, France

[2] Univ Cote Azur, CNRS, CRHEA, Rue Bernard Gregory, F-06560 Valbonne, France

[3] Univ Nice Sophia Antipolis, Inst Phys Nice, F-06108 Nice, France

[4] Univ Montpellier, CNRS, Lab Charles Coulomb L2C, UMR 5221, F-34905 Montpellier, France

[5] CEA, INAC, PHELIQS, Nanophys & Semicond Grp, F-38000 Grenoble, France

[6] Univ Grenoble Alpes, F-38000 Grenoble, France

来源：

2017 IEEE PHOTONICS SOCIETY SUMMER TOPICAL MEETING SERIES (SUM) | 2017年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present recent progress achieved with III-nitride photonic circuits epitaxially grown on silicon(111). The photonic circuits embed two-dimensional photonic crystals and microdisk resonators coupled to suspended waveguides. We discuss the linear and nonlinear response of the resonators through second and third harmonic generation.

引用

页码：49 / 50

页数：2

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