Perspectives for III-nitride photonic platforms

被引:0
|
作者
Boucaud, Philippe [1 ]
Bhat, Nagesh [1 ]
Gromovyi, Maksym [2 ]
El Kurdi, Moustafa [2 ]
Reserbat-Plantey, Antoine [1 ]
Dau, Minh Tuan [1 ]
Al Khalfioui, Mohamed [1 ]
Alloing, Blandine [1 ]
Damilano, Benjamin [1 ]
Semond, Fabrice [1 ]
机构
[1] Univ Cote Azur, CNRS, CRHEA, Rue Bernard Gregory, F-06905 Valbonne, France
[2] Univ Paris Saclay, CNRS, C2N, 10 Blvd Thomas Gobert, F-91120 Palaiseau, France
关键词
perspectives; photonic circuits; III-nitride; integrated photonics; 2D materials; FREQUENCY COMB GENERATION; ROOM-TEMPERATURE; SILICON-NITRIDE; 2ND-HARMONIC GENERATION; EPITAXIAL-GROWTH; NEAR-ULTRAVIOLET; LASER-DIODES; ALUMINUM; EMISSION; BLUE;
D O I
10.1088/2399-1984/ad41aa
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The development of photonic platforms for the visible or ultra-violet spectral range represents a major challenge. In this article, we present an overview of the technological solutions available on the market. We discuss the pros and cons associated with heterogeneous or monolithic integration. We specifically focus on the III-nitride platform for integrated photonics. The III-nitrides offer every building block needed for a universal platform. We discuss the additional opportunities offered by combining III-nitride semiconductors with other materials such as two-dimensional materials.
引用
收藏
页数:13
相关论文
共 50 条
  • [1] III-nitride photonic crystals
    Oder, TN
    Shakya, J
    Lin, JY
    Jiang, HX
    [J]. APPLIED PHYSICS LETTERS, 2003, 83 (06) : 1231 - 1233
  • [2] III-nitride photonic cavities
    Butte, Raphael
    Grandjean, Nicolas
    [J]. NANOPHOTONICS, 2020, 9 (03) : 569 - 598
  • [3] III-Nitride on Silicon Photonic Circuits
    Boucaud, P.
    Roland, I.
    Zeng, Y.
    Tabataba-Vakili, F.
    El Kurdi, M.
    Sauvage, S.
    Checoury, X.
    Gromovyi, M.
    Rennesson, S.
    Semond, F.
    Duboz, J. -Y.
    de Micheli, M.
    Selles, J.
    Brimont, C.
    Guillet, T.
    Gayral, B.
    [J]. 2017 IEEE PHOTONICS SOCIETY SUMMER TOPICAL MEETING SERIES (SUM), 2017, : 49 - 50
  • [4] III-Nitride LEDs with photonic crystal structures
    Wierer, JJ
    Krames, MR
    Epler, JE
    Gardner, NF
    Wendt, JR
    Sigalas, MM
    Brueck, SRJ
    Li, D
    Shagam, M
    [J]. Light-Emitting Diodes: Research, Manufacturing, and Applications IX, 2005, 5739 : 102 - 107
  • [5] III-Nitride Heterojunction FETs : Future Perspectives
    Kuzuhara, Masaaki
    [J]. EDSSC: 2008 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, 2008, : 461 - 464
  • [6] Advances in III-nitride micro-photonic devices
    Jiang, HX
    Lin, JY
    [J]. LEOS 2001: 14TH ANNUAL MEETING OF THE IEEE LASERS & ELECTRO-OPTICS SOCIETY, VOLS 1 AND 2, PROCEEDINGS, 2001, : 758 - 759
  • [7] Monolithic III-nitride photonic circuit on a single chip
    Xie, Mingyuan
    Jiang, Yan
    Gao, Xumin
    Tang, Xianwu
    Yuan, Jialei
    Shi, Zheng
    Wang, Yongjin
    [J]. APPLIED PHYSICS LETTERS, 2023, 123 (26)
  • [8] III-Nitride photonic crystals for blue and UV emitters
    Shakya, J
    Kim, KH
    Li, J
    Lin, JY
    Jiang, HX
    Oder, TN
    [J]. GAN AND RELATED ALLOYS - 2003, 2003, 798 : 163 - 168
  • [9] Transferrable monolithic III-nitride photonic circuit for multifunctional optoelectronics
    Shi, Zheng
    Gao, Xumin
    Yuan, Jialei
    Zhang, Shuai
    Jiang, Yan
    Zhang, Fenghua
    Jiang, Yuan
    Zhu, Hongbo
    Wang, Yongjin
    [J]. APPLIED PHYSICS LETTERS, 2017, 111 (24)
  • [10] Monolithic III-nitride photonic integration toward multifunctional devices
    Gao, Xumin
    Shi, Zheng
    Jiang, Yan
    Zhang, Shuai
    Qin, Chuan
    Yuan, Jialei
    Liu, Yuhuai
    Grunberg, Peter
    Wang, Yongjin
    [J]. OPTICS LETTERS, 2017, 42 (23) : 4853 - 4856