Quantum cascade laser based on GaAs/Al0.45Ga0.55As heteropair grown by MOCVD

被引：4

作者：

Zasavitskii, I. I. ^{[1
,2
]}

Zubov, A. N. ^{[1
,2
]}

Andreev, A. Yu. ^{[3
]}

Bagaev, T. A. ^{[3
]}

Gorlachuk, P. V. ^{[3
]}

Ladugin, M. A. ^{[3
]}

Padalitsa, A. A. ^{[3
]}

Lobintsov, A. V. ^{[3
]}

Sapozhnikov, S. M. ^{[3
]}

Marmalyuk, A. A. ^{[2
,3
]}

机构：

[1] Russian Acad Sci, PN Lebedev Phys Inst, Leninskii Prosp 53, Moscow 119991, Russia

[2] Natl Res Nucl Univ MEPhI, Kashirskoe Sh 31, Moscow 115409, Russia

[3] OJSC MF Stelmakh Polyus Res Inst, Ul Vvedenskogo 3, Moscow 117342, Russia

来源：

QUANTUM ELECTRONICS | 2016年 / 46卷 / 05期

关键词：

quantum cascade laser; MOCVD; GaAs/AlGaAs heteropair; mid-IR spectral region; VAPOR-PHASE EPITAXY; MU-M; OPERATION; POWER;

D O I：

10.1070/QEL16058

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A pulsed quantum cascade laser emitting in the wavelength range 9.5 - 9.7 mm at 77.4 K is developed based on the GaAs/Al0.45Ga0.55As heteropair. The laser heterostructure was grown by MOCVD. The threshold current density was 1.8 kA cm(-2). The maximum output power of the laser with dimensions of 30 mu m x 3 mm and with cleaved mirrors exceeded 200 mW.

引用

页码：447 / 450

页数：4

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