OPTIMIZED HEMT STRUCTURE WITH AN AL0.45GA0.55AS SPACER AND AN AL0.20GA0.80AS DOPED REGION

被引：3
|
作者：
HUANG, JC [1 ]
WICKS, GW [1 ]
CALAWA, AR [1 ]
EASTMAN, LF [1 ]
机构：
[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
来源：
ELECTRONICS LETTERS | 1985年 / 21卷 / 20期
关键词：
D O I：
10.1049/el:19850654
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have obtained an optimised HEMT structure with a high 2DEG sheet concentration of 1 multiplied by 10**1**2 cm** minus **2 while maintaining a high 77 K electron Hall mobility of 120 000 cm**2 Vs. The structure utilises a 45% Al mole fraction. AlGaAs barrier and a 20% Al mole fraction doped region. It has little or no light sensitivity at 77 K.
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收藏
页码：925 / 926
页数：2
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