Quantum cascade laser based on GaAs/Al0.45Ga0.55As heteropair grown by MOCVD

被引：4
|
作者：
Zasavitskii, I. I. [1 ,2 ]
Zubov, A. N. [1 ,2 ]
Andreev, A. Yu. [3 ]
Bagaev, T. A. [3 ]
Gorlachuk, P. V. [3 ]
Ladugin, M. A. [3 ]
Padalitsa, A. A. [3 ]
Lobintsov, A. V. [3 ]
Sapozhnikov, S. M. [3 ]
Marmalyuk, A. A. [2 ,3 ]
机构：
[1] Russian Acad Sci, PN Lebedev Phys Inst, Leninskii Prosp 53, Moscow 119991, Russia
[2] Natl Res Nucl Univ MEPhI, Kashirskoe Sh 31, Moscow 115409, Russia
[3] OJSC MF Stelmakh Polyus Res Inst, Ul Vvedenskogo 3, Moscow 117342, Russia
来源：
QUANTUM ELECTRONICS | 2016年 / 46卷 / 05期
关键词：
quantum cascade laser; MOCVD; GaAs/AlGaAs heteropair; mid-IR spectral region; VAPOR-PHASE EPITAXY; MU-M; OPERATION; POWER;
D O I：
10.1070/QEL16058
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A pulsed quantum cascade laser emitting in the wavelength range 9.5 - 9.7 mm at 77.4 K is developed based on the GaAs/Al0.45Ga0.55As heteropair. The laser heterostructure was grown by MOCVD. The threshold current density was 1.8 kA cm(-2). The maximum output power of the laser with dimensions of 30 mu m x 3 mm and with cleaved mirrors exceeded 200 mW.
引用
收藏
页码：447 / 450
页数：4
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