Quantum cascade laser based on GaAs/Al0.45Ga0.55As heteropair grown by MOCVD

被引：4
|
作者：
Zasavitskii, I. I. [1 ,2 ]
Zubov, A. N. [1 ,2 ]
Andreev, A. Yu. [3 ]
Bagaev, T. A. [3 ]
Gorlachuk, P. V. [3 ]
Ladugin, M. A. [3 ]
Padalitsa, A. A. [3 ]
Lobintsov, A. V. [3 ]
Sapozhnikov, S. M. [3 ]
Marmalyuk, A. A. [2 ,3 ]
机构：
[1] Russian Acad Sci, PN Lebedev Phys Inst, Leninskii Prosp 53, Moscow 119991, Russia
[2] Natl Res Nucl Univ MEPhI, Kashirskoe Sh 31, Moscow 115409, Russia
[3] OJSC MF Stelmakh Polyus Res Inst, Ul Vvedenskogo 3, Moscow 117342, Russia
来源：
QUANTUM ELECTRONICS | 2016年 / 46卷 / 05期
关键词：
quantum cascade laser; MOCVD; GaAs/AlGaAs heteropair; mid-IR spectral region; VAPOR-PHASE EPITAXY; MU-M; OPERATION; POWER;
D O I：
10.1070/QEL16058
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A pulsed quantum cascade laser emitting in the wavelength range 9.5 - 9.7 mm at 77.4 K is developed based on the GaAs/Al0.45Ga0.55As heteropair. The laser heterostructure was grown by MOCVD. The threshold current density was 1.8 kA cm(-2). The maximum output power of the laser with dimensions of 30 mu m x 3 mm and with cleaved mirrors exceeded 200 mW.
引用
收藏
页码：447 / 450
页数：4
相关论文
共 50 条
  • [41] High quality Al(Ga)As/GaAs/Al(Ga)As quantum wells grown on (111)A GaAs substrates
    Chin, A
    Lee, K
    APPLIED PHYSICS LETTERS, 1996, 68 (24) : 3437 - 3439
  • [42] CHARACTERIZATION OF MOCVD GROWN (AL, GA)AS/GAAS SINGLE QUANTUM WELL STRUCTURES BY RUTHERFORD BACKSCATTERING AND PHOTOLUMINESCENCE SPECTROSCOPY
    FLAGMEYER, R
    OELGART, G
    KREHER, K
    SCHWABE, R
    BUGGE, F
    LEHMANN, L
    JACOBS, K
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 111 (02): : 541 - 550
  • [43] Self-organized type-II In0.55Al0.45As/Al0.50Ga0.50As quantum dots realized on GaAs(311)A
    Liu, HY
    Zhou, W
    Ding, D
    Jiang, WH
    Xu, B
    Liang, JB
    Wang, ZG
    APPLIED PHYSICS LETTERS, 2000, 76 (25) : 3741 - 3743
  • [44] Electron-confined LO-phonon scattering in GaAs-Al0.45Ga0.55As superlattice
    Abouelaoualim, D
    PRAMANA-JOURNAL OF PHYSICS, 2006, 66 (02): : 455 - 465
  • [45] Electron-confined LO-phonon scattering in GaAs-Al0.45Ga0.55As superlattice
    D. Abouelaoualim
    Pramana, 2006, 66 : 455 - 465
  • [46] 基于GaAs/Al0.45Ga0.55As超晶格芯片自发混沌振荡的8Gb/s物理真随机数实现
    刘延飞
    陈诚
    杨东东
    李修建
    物理学报, 2020, 69 (10) : 140 - 148
  • [47] Digitally graded GaAs/Al0.44Ga0.56As quantum-cascade laser
    Indjin, D
    Tomic, S
    Ikonic, Z
    Harrison, P
    Kelsall, RW
    Milanovic, V
    Kocinac, S
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 17 (1-4): : 620 - 622
  • [48] CHARACTERIZATION OF LP-MOCVD GROWN (AL, GA)AS/GAAS HETEROSTRUCTURES BY PHOTOLUMINESCENCE - SINGLE HETEROJUNCTION AND INADVERTENT QUANTUM WELLS
    ZEMON, S
    BLACK, J
    NORRIS, P
    LEE, J
    LAMBERT, G
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (12): : L925 - L927
  • [49] Quantum cascade laser grown by MOCVD and operating at 9,7 μm
    Ladugin, M. A.
    Andreev, A. Yu.
    Bagaev, T. A.
    Gorlachuk, P. V.
    Lobintsov, A. V.
    Marmalyuk, A. A.
    Padalitsa, A. A.
    Ryaboshtan, Yu. L.
    Sapozhnikov, S. M.
    Simakov, V. A.
    Telegin, K. Yu.
    Zasavitskii, I. I.
    Zubov, A. N.
    2016 INTERNATIONAL CONFERENCE LASER OPTICS (LO), 2016,
  • [50] Mid-infrared quantum cascade laser grown by MOCVD at 4.6 µm
    Pang L.
    Cheng Y.
    Zhao W.
    Tan S.
    Guo Y.
    Li B.
    Wang J.
    Zhou D.
    Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2022, 51 (06):
12345