Ferroelectric properties of highly (111) oriented Pb(Zr0.4Ti0.6)O3 thin films fabricated using sol-gel process

The well-crystallized and highly (111)-oriented Pb(Zr0.4Ti0.6)O-3(PZT) thin films were prepared using sol-gel process. The P-V curves and switching current characteristics of PZT thin films were investigated as a function of annealing temperature. With increasing the annealing temperature from 400degreesC to 700degreesC, the P-V hysteresis loop became more rectangular shaped, the remnant and saturated polarizations increased, and the activation field decreased. The remnant polarization (P-r) of the film annealed at 400degreesC and 700degreesC was 23 muC/cm(2) and 29 muC/cm(2), respectively. The switching current behavior depending on the annealing temperature was successfully observed. The value of activation field (alpha) decreased from 422 +/- 27 kV/cm to 339 +/- 28 kV/cm with increasing the annealing temperature. These ferroelectric properties of highly (111)-oriented PZT films were discussed in terms of the change in the grain size and domain configuration.