Dielectric and ferroelectric properties of highly oriented (Pb,Nb)(Zr,Sn,Ti)O3 thin films grown by a sol-gel process

被引：24

作者：

Zhai, JW ^{[1
]}

Cheung, MH

Zheng, KX

Xin, L

Chen, HD

Colla, EV

Wu, TB

机构：

[1] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China

[2] Univ Illinois, Dept Phys, Urbana, IL 61801 USA

[3] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 19期

关键词：

D O I：

10.1063/1.1519944

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Antiferroelectric (Pb,Nb)(Zr,Sn,Ti)O-3 thin films were deposited via a sol-gel process on LaNiO3-coated silicon substrates. Films showed a strong (001) preferred orientation upon annealing at 500-700 degreesC for 30 min. The dependence of electrical properties on film thickness has been studied, with the emphasis placed on field-induced phase switching from the antiferroelectric to the ferroelectric state. The decrease of film thickness led to an increase of the phase-switching field along with the appearance of remanent polarization. However, the dielectric constant and maximum polarization decreased with the reduction of film thickness. Saturation polarization was 35 muC/cm(2), which is equal to that observed in bulk samples. (C) 2002 American Institute of Physics.

引用

页码：3621 / 3623

页数：3

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