Ferroelectric properties of crystalline oriented Pb(Zr,Ti)O3 thin films prepared by sol-gel technique

被引:12
|
作者
Lee, EG
Park, JS
Lee, JG
机构
[1] Chosun Univ, Dept Mat Sci & Engn, Dong Gu, Kwangju 501759, South Korea
[2] Kookmin Univ, Dept Met Engn, Seoul 136702, South Korea
关键词
ferroelectric properties; preferred orientation; thermal stress;
D O I
10.1016/S0040-6090(97)00591-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ferroelectric properties and reliability characteristics of (111) and (100) preferred tetragonal Pb(Zr0.2Ti0.8)O-3 (PZT) thin film capacitors have been investigated as a function of top electrode thickness. The (111) preferred films exhibit better squareness of the hysteresis loop with larger remanant polarization and coercive field than the (100) preferred films. Top electrode thickness dependence of switching polarization can be explained by the compressive stress induced by the top electrode annealing. The film with thinner top electrode shows less initial switching polarization, however, better endurance characteristics due to enhancing partial switching region, (C) 1998 Elsevier Science S.A.
引用
收藏
页码:228 / 231
页数:4
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