Full-band Monte Carlo simulations of high-field electron transport in GaAs and ZnS -: art. no. 201201

被引：22
|
作者：
Fitzer, N [1 ]
Kuligk, A
Redmer, R
Städele, M
Goodnick, SM
Schattke, W
机构：
[1] Univ Rostock, Fachbereich Phys, D-18051 Rostock, Germany
[2] Infineon Technol AG, Corp Res ND, D-81730 Munich, Germany
[3] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA
[4] Univ Kiel, Inst Theoret Phys, D-24118 Kiel, Germany
来源：
PHYSICAL REVIEW B | 2003年 / 67卷 / 20期
关键词：
D O I：
10.1103/PhysRevB.67.201201
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We study the high-field transport in GaAs and ZnS based on ab initio band structures determined within density-functional theory using an exact exchange formalism with a local-density approximation for correlations. The transport properties are gained from ensemble Monte Carlo simulations where all relevant scattering mechanisms are considered including a realistic impact ionization rate. Important results are shown for the drift velocity, the mean kinetic energy, and the valley occupation.
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页数：4
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