HIGH-FIELD ELECTRON-TRANSPORT IN COMPENSATED GAAS

High-field electron transport in compensated GaAs has been determined by Monte Carlo calculation for various compensation ratios at lattice temperatures of 77, 160, and 300 K. The velocity-field characteristics exhibit two maxima at both low and high temperatures for several doping compensations. It is found that doping compensation has a stronger effect on electron transport at low temperatures than at high temperatures over a range of field values. As compared to InP, In0.53Ga0.47As, and Al0.25In0.75As, the negative differential mobilities and the high-field velocities have been noticeably reduced by doping compensations. The origin of this unique two maxima feature in the velocity-field relation for compensated GaAs has been discussed in comparison with other compensated semiconductors.