HIGH-FIELD ELECTRON-TRANSPORT IN COMPENSATED GAAS

被引：9

作者：

WU, EY ^{[1
]}

YU, BH ^{[1
]}

机构：

[1] UNIV KANSAS,DEPT PHYS & ASTRON,LAWRENCE,KS 66045

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 14期

关键词：

D O I：

10.1063/1.105159

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-field electron transport in compensated GaAs has been determined by Monte Carlo calculation for various compensation ratios at lattice temperatures of 77, 160, and 300 K. The velocity-field characteristics exhibit two maxima at both low and high temperatures for several doping compensations. It is found that doping compensation has a stronger effect on electron transport at low temperatures than at high temperatures over a range of field values. As compared to InP, In0.53Ga0.47As, and Al0.25In0.75As, the negative differential mobilities and the high-field velocities have been noticeably reduced by doping compensations. The origin of this unique two maxima feature in the velocity-field relation for compensated GaAs has been discussed in comparison with other compensated semiconductors.

引用

页码：1503 / 1505

页数：3

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