High-field electron transport in AlGaN/GaN heterostructures

被引：6
|
作者：
Barker, JM [1 ]
Ferry, DK [1 ]
Goodnick, SM [1 ]
Koleske, DD [1 ]
Allerman, A [1 ]
Shu, RJ [1 ]
机构：
[1] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA
来源：
PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7 | 2005年 / 2卷 / 07期
关键词：
D O I：
10.1002/pssc.200461384
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Experimental studies have been performed on the velocity-field characteristics of AlGaN/GaN heterostructures. A pulsed voltage input in combination with a four-point measurement was used in a 50 Q enviromnent to determine the drift velocity of electrons in the two-dimensional electron gas as a function of the applied electric field. These measurements show an apparent saturation velocity near 3.1x10(7)cm/s, at a field of 140 kV/cm. A comparison of these studies shows that the experimental velocities are close to previously published simulations based upon Monte Carlo techniques.
引用
收藏
页码：2564 / 2568
页数：5
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