Vertical electron transport in GaN/AlGaN heterostructures

被引：0
|
作者：
Reklaitis, A [1 ]
机构：
[1] Inst Semicond Phys, LT-01108 Vilnius, Lithuania
来源：
ACTA PHYSICA POLONICA A | 2005年 / 107卷 / 02期
关键词：
D O I：
10.12693/APhysPolA.107.261
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Nonequilibrium dc and large-signal ac vertical electron transport in GaN/AlGaN heterostructures is investigated by Monte Carlo simulations. The symmetric two-barrier GaN/AlGaN heterostructures are studied. The results of simulations show that polarization charges have a profound effect on dc and large-signal ac characteristics of vertical electron transport in GaN/AlGaN heterostructures. Under certain composition, geometry and doping profile, the GaN/AlGaN heterostructures may become bipolar, i.e., the inversion layers may originate at heterointerfaces due to strong built-in electric fields, which are induced by polarization charges.
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收藏
页码：261 / 266
页数：6
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