Understanding the Average Electron-Hole Pair-Creation Energy in Silicon and Germanium Based on Full-Band Monte Carlo Simulations

被引：14

作者：

Fang, Jingtian ^{[1
,2
]}

Reaz, Mahmud ^{[3
]}

Weeden-Wright, Stephanie L. ^{[4
]}

Schrimpf, Ronald D. ^{[2
]}

Reed, Robert A. ^{[2
]}

Weller, Robert A. ^{[2
]}

Fischetti, Massimo V. ^{[5
]}

Pantelides, Sokrates T. ^{[1
,2
]}

机构：

[1] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

[2] Vanderbilt Univ, Dept Elect Engn & Comp Sci, 221 Kirkland Hall, Nashville, TN 37235 USA

[3] Vanderbilt Univ, Interdisciplinary Mat Sci Program, 221 Kirkland Hall, Nashville, TN 37235 USA

[4] Lipscomb Univ, Dept Elect & Comp Engn, Nashville, TN 37204 USA

[5] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2019年 / 66卷 / 01期

基金：

美国国家科学基金会;

关键词：

Electron-hole-pair (EHP); impact ionization; Monte Carlo; single-event effects (SEEs); FANO FACTOR; TEMPERATURE-DEPENDENCE; IMPACT IONIZATION; SCATTERING; LIFETIME;

D O I：

10.1109/TNS.2018.2879593

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The thermalization process of sub-10-eV charge carriers is examined with treating carrier transport with full-band Monte Carlo simulations. The average energy loss (3.69 eV in Si and 2.62 eV in Ge) required to create a thermalized electron-hole pair, obtained from the simulations, is very close to the experimentally measured radiation-ionization energies of Si and Ge irradiated with high-energy particles. These results suggest that only interactions that occur after the radiation-generated charge carriers decay to energies of similar to 10 eV or less determine the fundamental property of the radiation-ionization energies. In addition to an energy loss equal to the band gap energy via impact ionization, acoustic-phonon emission, which has been omitted in prior work, contributes 30% of the remaining carrier energy loss, while optical-phonon emission contributes the other 70%.

引用

页码：444 / 451

页数：8

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