Full-band Monte Carlo simulations of photo excitation in silicon diode structures

被引：2
|
作者：
Aboud, S [1 ]
Saraniti, M
Goodnick, S
Brodscheim, A
Leitenstorfer, A
机构：
[1] Rush Univ, Dept Mol Biophys, Chicago, IL 60612 USA
[2] IIT, Dept Elect & Comp Engn, Chicago, IL 60616 USA
[3] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA
[4] Tech Univ Munich, Dept Phys E11, Munich, Germany
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 04期
关键词：
D O I：
10.1088/0268-1242/19/4/101
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, a full-band particle-based simulator is used to model photo-generated electron-hole pairs in Si to investigate ultra-fast charge transport. This work is motivated by previous simulations of transient transport in III-V material as well as recent experimental measurements of optically excited Si pin diodes. The simulation results show evidence of velocity overshoot at high fields (greater than 100 kV cm(-1)), and can be attributed to momentum relaxation.
引用
收藏
页码：S301 / S303
页数：3
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