Multiphysics Modeling of CMOS Fully Integrated 2.58 THz Thermal Detector

Terahertz (THz) detectors have shown attractive prospects in the areas of THz sensing and imaging. This paper presents the multi-physics modeling of an on-chip octagonal ring antenna loaded with a polysilicon resistor coupled with a sensitive proportional to absolute temperature (PTAT) sensor using a 55 nm CMOS process, leading to an uncooled monolithic resonant CMOS fully integrated THz thermal detector. The theoretical analysis, multi-physics modeling, and experimental verification of the detector are presented in detail. The maximum responsivity is 38.04 V/W with a noise equivalent power (NEP) of 2.89 mu W/Hz(0.5) at 2.58 THz for the THz source and an existing atmospheric window, and it has the natural scalability to focal plane arrays, showing great potentials for uncooled, compact, low-cost, easy-integration, and mass-production THz detection systems.