Multiphysics Modeling of CMOS Fully Integrated 2.58 THz Thermal Detector

被引：0
|
作者：
Wang, Xu [1 ]
Li, Mengjie [1 ]
Li, Zhao [1 ]
机构：
[1] Tianjin Univ, Sch Microelect, Tianjin, Peoples R China
来源：
2020 IEEE MTT-S INTERNATIONAL CONFERENCE ON NUMERICAL ELECTROMAGNETIC AND MULTIPHYSICS MODELING AND OPTIMIZATION (NEMO 2020) | 2020年
基金：
国家重点研发计划;
关键词：
THz; CMOS; thermal detector; octagonal ring antenna; sensor; METAMATERIAL ABSORBER; ANTENNA;
D O I：
10.1109/NEMO49486.2020.9343551
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Terahertz (THz) detectors have shown attractive prospects in the areas of THz sensing and imaging. This paper presents the multi-physics modeling of an on-chip octagonal ring antenna loaded with a polysilicon resistor coupled with a sensitive proportional to absolute temperature (PTAT) sensor using a 55 nm CMOS process, leading to an uncooled monolithic resonant CMOS fully integrated THz thermal detector. The theoretical analysis, multi-physics modeling, and experimental verification of the detector are presented in detail. The maximum responsivity is 38.04 V/W with a noise equivalent power (NEP) of 2.89 mu W/Hz(0.5) at 2.58 THz for the THz source and an existing atmospheric window, and it has the natural scalability to focal plane arrays, showing great potentials for uncooled, compact, low-cost, easy-integration, and mass-production THz detection systems.
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页数：4
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