Fully integrated 10 GHz CMOS VCO

被引：10
|
作者：
Do, MA [1 ]
Zhao, R [1 ]
Yeo, KS [1 ]
Ma, JG [1 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Div Circuits & Syst, Singapore 639798, Singapore
来源：
ELECTRONICS LETTERS | 2001年 / 37卷 / 16期
关键词：
D O I：
10.1049/el:20010689
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A differential voltage-controlled oscillator has been designed to operate in the 10GHz band using a 0.25 mum CMOS process and low Q integrated inductors. The low gain and low Q problems of the components are overcome by the deployment of the cascode configuration with negative conductance generation to enhance the loop gain and Q value. PMOS varactors are used for varying the oscillating frequency from 9.7 to 11.4 GHz. The phase noise at 400 kHz offset is from -101 dB/Hz at the low frequency end to -87 dB/Hz at the high frequency end.
引用
收藏
页码：1021 / 1023
页数：3
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