Epitaxial growth of semipolar InN(10(1)over-tilde3) on LaAlO3 substrate: Epitaxial relationship analysis

被引：0
|
作者：
Chen, Wei-Chun [1 ]
Kuo, Shou-Yi [2 ,3 ]
Tian, Jr. -Sheng [4 ]
Wang, Wei-Lin [4 ]
Lai, Fang-I [5 ]
Wu, Yue-Han [4 ]
Chang, Li [4 ]
机构：
[1] Natl Appl Res Labs, Instrument Technol Res Ctr, Hsinchu 30076, Taiwan
[2] Chang Gung Univ, Dept Elect Engn, Taoyuan 33302, Taiwan
[3] Chang Gung Mem Hosp, Dept Nucl Med, Taoyuan 33302, Taiwan
[4] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan
[5] Yuan Ze Univ, Dept Photon Engn, Chungli 32003, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 05期
关键词：
GALLIUM NITRIDE NANORODS; PULSED-LASER DEPOSITION; M-PLANE SAPPHIRE; INN; GAAS(110); MOVPE; FILMS;
D O I：
10.7567/JJAP.56.055505
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Epitaxial semipolar InN(10 (1) over tilde3) crystals were grown on a LaAlO3(112) substrate using radio frequency plasma-assisted molecular beam epitaxy without any interlayer. The lattice mismatch between InN and LaAlO3 was estimated to be % 7.75% along the [1 (2) over tilde 10](InN) direction and 0.2% along the [(3) over tilde 032](InN) direction. The InN film is epitaxic with the LaAlO3 substrate, with orientation relationships between InN(10 (1) over tilde3) parallel to LaAlO3(112) and [1 (2) over tilde 10](InN) parallel to [11 (1) over tilde](LAO). InN grown on LaAlO3(112) appears (10 (1) over tilde3) plane orientated, with two types of domains. Semipolar InN(10 (1) over tilde3) layers can be grown at 510 degrees C and show X-ray rocking curve FWHMs of 1830 and 1408 arcsec for InN(0002) and InN(10 (1) over tilde3), respectively. However, InN grown at 510 degrees C has the highest peak intensity and the narrowest FWHM of the prepared samples, indicating high-quality crystal growth. (C) 2017 The Japan Society of Applied Physics
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页数：5
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