Electronic properties, devices and applications of diamond thin films

被引：2
|
作者：
Deneuville, A [1 ]
机构：
[1] Univ Grenoble 1, CNRS, Etud Proprietes Elect Solides Lab, F-38042 Grenoble 9, France
来源：
COMPTES RENDUS DE L ACADEMIE DES SCIENCES SERIE IV PHYSIQUE ASTROPHYSIQUE | 2000年 / 1卷 / 01期
关键词：
diamond; electronic properties; applications; p and n doping; devices; electrochemistry;
D O I：
10.1016/S1296-2147(00)00102-5
中图分类号：
P1 [天文学];
学科分类号：
0704 ;
摘要：
The effect of the preparation conditions on p and n doping, the characteristics of the Schottky diodes, and the MESFET and MISFET are shown. The main applications of undoped and doped polycrystalline and homoepitaxial films (high temperature electronic, particule and UV solar blind detectors and electrodes for various electrochemical reactions) are described in connection with the characteristics of the devices and of the films. (C) 2000 Academie des sciences/Editions scientifiques ct medicales Elsevier SAS.
引用
收藏
页码：81 / 90
页数：10
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