DRY PLASMA CLEANING BY ADVANCED HDRF TECHNOLOGY (HIGH DENSITY RADICAL FLUX)

被引:0
|
作者
Pilloux, Yannick [1 ]
机构
[1] Plasma Therm LCC, St Petersburg, FL 33716 USA
关键词
D O I
暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Semiconductor industry has been focused over decades on Dry etch and deposition technologies, while cleaning was mainly wet technology. Die size are shrinking in main applications, as well as reducing packaging size. Thus, limitation of wet chemistry is leaving space to dry plasma cleaning. This paper will focus on how dry Plasma technology named HDRF, for High Density Radical Flux, can provide efficient cleaning solution without damaging sensitive layer like GaN, TiN, and keep low temperature processing. In addition, moving from wet to dry cleaning technology, allow to eliminate all dirty processes and keep green environment.
引用
收藏
页数:2
相关论文
共 50 条
  • [31] Problems and solutions for low pressure, high density, inductively coupled plasma dry etch applications
    Electrotech Ltd, Bristol, United Kingdom
    Surface and Coatings Technology, 1997, 97 (1 -3 pt 1): : 10 - 14
  • [32] High-density plasma dry etch for DUV attenuated phase-shifting masks
    Peng, S
    Adair, W
    PHOTOMASK AND X-RAY MASK TECHNOLOGY V, 1998, 3412 : 228 - 232
  • [33] Problems and solutions for low pressure, high density, inductively coupled plasma dry etch applications
    Puttock, M
    SURFACE & COATINGS TECHNOLOGY, 1997, 97 (1-3): : 10 - 14
  • [34] The Advanced 7th Generation IGBT Module for High Power Density Technology
    Kawabata, J.
    Kusunoki, Y.
    Onozawa, Y.
    Nishimura, Y.
    Kobayashi, Y.
    Ikawa, O.
    2015 9TH INTERNATIONAL CONFERENCE ON POWER ELECTRONICS AND ECCE ASIA (ICPE-ECCE ASIA), 2015, : 554 - 559
  • [35] High-Density Fan-Out Technology for Advanced SiP and Heterogeneous Integration
    Do, WonChul
    2018 IEEE 2ND ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2018), 2018, : 138 - 141
  • [36] High susceptibility of p+ gate oxides to plasma damage in advanced CMOS technology
    Kim, SU
    1997 2ND INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE, 1997, : 189 - 192
  • [37] HIGH-DENSITY, LOW-TEMPERATURE DRY-ETCHING IN GAAS AND INP DEVICE TECHNOLOGY
    PEARTON, SJ
    ABERNATHY, CR
    REN, F
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (03): : 849 - 852
  • [38] Low-pressure, high-density plasma nitriding: Mechanisms, technology and results
    Czerwiec, T.
    Michel, H.
    Bergmann, E.
    Surface and Coatings Technology, 1998, 108-109 (1-3): : 182 - 190
  • [39] Low-pressure, high-density plasma nitriding: mechanisms, technology and results
    Czerwiec, T
    Michel, H
    Bergmann, E
    SURFACE & COATINGS TECHNOLOGY, 1998, 108 (1-3): : 182 - 190
  • [40] Particle Defect Reduction Through YF3 Coated Remote Plasma Source for High Throughput Dry Cleaning Process
    Seo, Hyojeong
    Yang, Jeonghye
    Ma, Young Jae
    Park, Jongwoo
    Kim, Mi Kyoung
    Seo, David H.
    Yoon, Sung Jin
    Park, Sang Jong
    2020 31ST ANNUAL SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE (ASMC), 2020,