The Advanced 7th Generation IGBT Module for High Power Density Technology

被引：0
|
作者：
Kawabata, J. [1 ]
Kusunoki, Y. [1 ]
Onozawa, Y. [1 ]
Nishimura, Y. [1 ]
Kobayashi, Y. [1 ]
Ikawa, O. [1 ]
机构：
[1] Fuji Elect Co Ltd, Tokyo, Japan
来源：
2015 9TH INTERNATIONAL CONFERENCE ON POWER ELECTRONICS AND ECCE ASIA (ICPE-ECCE ASIA) | 2015年
关键词：
Power modules; High power density; High efficiency; High reliability;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Recently the main requirements found in the market are further downsizing and higher efficiency of power conversion systems. Enhanced power density of the power modules will be the key to succeed. The increasing package reliability in higher junction temperature operation will be the major challenge. By further improvement of the chip characteristics and the development of new high reliability package materials and technologies, the performance of the modules were significantly improved. Additionally, the maximum operating temperature was even increased to up to 175 degrees C. The new 7th generation IGBT module realized further downsizing and higher efficiency of power conversion systems.
引用
收藏
页码：554 / 559
页数：6
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