Electrical properties of Si:H/P-Si structures fabricated by hydrogen implantation

被引：6
|
作者：
Naumova, OV [1 ]
Antonova, IV [1 ]
Popov, VP [1 ]
Stas', VF [1 ]
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Siberian Div, Novosibirsk 630090, Russia
来源：
SEMICONDUCTORS | 2003年 / 37卷 / 01期
关键词：
D O I：
10.1134/1.1538545
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Hydrogenated silicon (Si:H) layers and Si:H/p-Si heterostructures were produced by multiple-energy (3-24 keV) high-dose (5 x 10(16)-3 x 10(17) cm(-2)) hydrogen implantation into p-Si wafers. After implantation, current transport across the structures is controlled by the Poole-Frenkel mechanism, with the energy of the dominating emission center equal to E-c -0.89 eV. The maximum photosensitivity is observed for structures implanted with 3.2 x 10(17) cm(-2) of hydrogen and annealed in the temperature range of 250-300degreesC. The band gap of the Si:H layer E-g approximate to 2.4 eV, and the dielectric constant epsilon approximate to 3.2. The density of states near the Fermi level is (1-2) x 10(17) cm(-3) eV(-1). (C) 2003 MAIK "Nauka/Interperiodica".
引用
收藏
页码：92 / 96
页数：5
相关论文
共 50 条
  • [31] An investigation of photo_electrical properties of silicon nanoparticles/PSi/p-Si hetero structures
    Amer B. Dheyab
    Mohanad M. Azzawi
    Ayad A. Dhaigham
    Optical and Quantum Electronics, 2023, 55
  • [32] The investigation of the electrical characteristics and photo-response properties of the Al/(CMAT)/p-Si structures
    Sevgili, Omer
    SOLID STATE SCIENCES, 2021, 117
  • [33] Fabrication of p-Si/beta-FeSi2 balls/n-si structures by MBE and their electrical and optical properties
    Suemasu, T
    Fujii, T
    Tanaka, M
    Takakura, K
    Iikura, Y
    Hasegawa, F
    LIGHT EMISSION FROM SILICON: PROGRESS TOWARDS SI-BASED OPTOELECTRONICS, 1999, 77 : 473 - 477
  • [34] Ultraviolet photoresponse properties of ZnO:N/p-Si and ZnO/p-Si heterojunctions
    Zahedi, F.
    Dariani, R. S.
    Rozati, S. M.
    SENSORS AND ACTUATORS A-PHYSICAL, 2013, 199 : 123 - 128
  • [35] Electrical characterisation of Al/n-Si/p-Si Schottky junctions prepared by plasma immersion implantation
    Horvath, ZJ
    Adam, M
    Ducso, C
    Pinter, I
    Van Tuyen, V
    Barsony, I
    Gombia, E
    Mosca, R
    Makaro, Z
    SOLID-STATE ELECTRONICS, 1998, 42 (02) : 221 - 228
  • [36] Characterization of electrical transport and properties of an Al/porous Si (PS)/p-Si/Al heterojunction
    Gulnahar, Murat
    Karacali, Tevhit
    Efeoglu, Hasan
    JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 797 : 859 - 864
  • [37] Electrical properties of anisotype n-CdO/p-Si heterojunctions
    M. N. Solovan
    V. V. Brus
    P. D. Maryanchuk
    Semiconductors, 2014, 48 : 899 - 904
  • [38] The effect of current pulse annealing on the electrical properties of polycrystalline p-Si
    Gridchin, VA
    Lubimskii, VM
    SEMICONDUCTORS, 2005, 39 (02) : 177 - 181
  • [39] Improving Electrical and Optical Properties of ZnO/p-Si Optical Sensor
    Cavas, Mehmet
    IRANIAN JOURNAL OF SCIENCE AND TECHNOLOGY TRANSACTION A-SCIENCE, 2020, 44 (A1): : 289 - 297
  • [40] Electrical properties of anisotype n-CdO/p-Si heterojunctions
    Solovan, M. N.
    Brus, V. V.
    Maryanchuk, P. D.
    SEMICONDUCTORS, 2014, 48 (07) : 899 - 904
12345