Electrical properties of Si:H/P-Si structures fabricated by hydrogen implantation

被引：6

作者：

Naumova, OV ^{[1
]}

Antonova, IV ^{[1
]}

Popov, VP ^{[1
]}

Stas', VF ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Siberian Div, Novosibirsk 630090, Russia

来源：

SEMICONDUCTORS | 2003年 / 37卷 / 01期

关键词：

D O I：

10.1134/1.1538545

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Hydrogenated silicon (Si:H) layers and Si:H/p-Si heterostructures were produced by multiple-energy (3-24 keV) high-dose (5 x 10(16)-3 x 10(17) cm(-2)) hydrogen implantation into p-Si wafers. After implantation, current transport across the structures is controlled by the Poole-Frenkel mechanism, with the energy of the dominating emission center equal to E-c -0.89 eV. The maximum photosensitivity is observed for structures implanted with 3.2 x 10(17) cm(-2) of hydrogen and annealed in the temperature range of 250-300degreesC. The band gap of the Si:H layer E-g approximate to 2.4 eV, and the dielectric constant epsilon approximate to 3.2. The density of states near the Fermi level is (1-2) x 10(17) cm(-3) eV(-1). (C) 2003 MAIK "Nauka/Interperiodica".

引用

页码：92 / 96

页数：5

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