A physics-based potential and electric field model of a nanoscale rectangular high-K gate dielectric HEMT

被引：4
|
作者：
Das, B. [1 ]
Goswami, R. [1 ]
Bhowmick, B. [1 ]
机构：
[1] Natl Inst Technol, Elect & Commun Engn Dept, Silchar 788010, India
来源：
PRAMANA-JOURNAL OF PHYSICS | 2016年 / 86卷 / 04期
关键词：
AlGaN/GaN; HEMT; surface potential; channel potential; electric field; ALGAN/GAN; TRANSISTOR; CHARGES; SURFACE; VOLTAGE;
D O I：
10.1007/s12043-015-1100-y
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In this paper, we have developed a physics-based model for surface potential, channel potential, electric field and drain current for AlGaN/GaN high electron mobility transistor with high-K gate dielectric using two-dimensional Poisson equation under full depletion approximation with the inclusion of effect of polarization charges. The accuracy of the model has been verified and is found to be in good agreement with the simulated results.
引用
收藏
页码：723 / 736
页数：14
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