Low-frequency noise in high-k gate dielectric nanoscale MOSFETs

被引：0
|
作者：
Han, I. K. [1 ]
Nam, H. D.
Choi, W. J.
Lee, J. I.
Szentpali, B.
Chovet, A.
机构：
[1] Korea Inst Sci & Technol, Nano Device Res Ctr, Seoul 130650, South Korea
[2] Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2006年 / 49卷 / 03期
关键词：
1/f noise; high-k dielectric; MOSFETs; tunneling;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The results of a simulation study on low-frequency excess noise in high-k SiO2/HfO2 dual dielectric n-MOSFETs are reported. Based on the 'Unified Model' where tunneling to traps in oxides is the major noise generation mechanism, we show how the low-frequency noise density and the frequency power index depend on the thickness of the interfacial oxide layer. Also, a simple and useful parameter extraction method for low-frequency noise is introduced.
引用
收藏
页码：1117 / 1120
页数：4
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