Noise in Si and SiGe MOSFETs with high-k gate dielectrics

被引：0

作者：

von Haartman, M ^{[1
]}

Malm, BG ^{[1
]}

Hellström, PE ^{[1
]}

Östling, M ^{[1
]}

机构：

[1] Royal Inst Technol, KTH, Dept Microelect & Informat Technol, SE-16440 Kista, Sweden

来源：

NOISE AND FLUCTUATIONS | 2005年 / 780卷

关键词：

1/f noise; low-frequency noise; high-k dielectrics; MOSFETs; metal-gate; SiGe;

D O I：

暂无

中图分类号：

R318 [生物医学工程];

学科分类号：

0831 ;

摘要：

This paper presents an overview of previous work and new insights on noise in Si-based MOSFETs with high-k gate dielectrics. Results for Al2O3, HfO2, HfAlOx and composite structures of these materials will be reported and compared. Incorporation of strained SiGe in high-k pMOSFETs in order to enhance hole mobility will be discussed in terms of low-frequency noise. A comparison will be made between devices with a surface Si channel, a surface SiGe channel and a buried SiGe channel. The influence of the gate electrode material and presence of a thin interfacial layer will be investigated. We will discuss noise modeling and highlight important differences compared to CMOS devices with standard gate oxide. Finally, we will discuss possible ways to reduce the 1/f noise in high-k MOSFETs. A noise reduction by a factor of two is obtained by forward biasing the substrate.

引用

页码：225 / 230

页数：6

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