Defects of Ge quantum dot arrays on the Si(001) surface

被引：8
|
作者：
Yuryev, V. A. [1 ]
Arapkina, L. V. [1 ]
机构：
[1] RAS, AM Prokhorov Gen Phys Inst, Moscow 119991, Russia
来源：
PHYSICA B-CONDENSED MATTER | 2009年 / 404卷 / 23-24期
关键词：
Ge quantum dots; Dense arrays; Defects; Scanning tunnelling microscopy; TRANSITION; PYRAMIDS; GROWTH; DOMES; BEAM;
D O I：
10.1016/j.physb.2009.08.118
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The defects of Ge quantum dot arrays formed at moderate temperatures on the Si(0 0 1) surface have been investigated by the ultra high vacuum scanning tunnelling microscope integrated with the molecular beam epitaxy chamber. A preliminary classification of the defects has been carried out. Morphological peculiarities of the defects have been studied. The surface densities of defects of different types have been determined. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：4719 / 4722
页数：4
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