Optical properties of Ge/Si quantum dot superlattices

被引：21
|
作者：
Yang, Z [1 ]
Shi, Y
Liu, JL
Yan, B
Zhang, R
Zheng, YD
Wang, KL
机构：
[1] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[3] Univ Calif Riverside, Dept Elect Engn, Riverside, CA 92521 USA
[4] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
来源：
MATERIALS LETTERS | 2004年 / 58卷 / 29期
基金：
中国国家自然科学基金;
关键词：
optical properties; quantum dots; superlattices; photoluminescence; Raman scattering; MBE;
D O I：
10.1016/j.matlet.2004.08.016
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Self-assembled Ge/Si quantum dot (QD) superlattices (SLs) were grown by a solid-source molecular beam epitaxy (MBE) system with the Stranski-Kranstanov (SK) growth mode. Atomic force microscope (AFM) and transmission electron microscope (TEM) characterizations of the samples were presented. Photoluminescence (PL) and Raman scattering measurements were carried out. The temperature dependence of the PL intensity has been reported and fitted by the Arrhenius and Berthelot type function. Some valuable parameters were obtained through the fitted curves, one of which was closely related to the dimension and effective mass of electron of the QDs. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：3765 / 3768
页数：4
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