Defects of Ge quantum dot arrays on the Si(001) surface

被引：8
|
作者：
Yuryev, V. A. [1 ]
Arapkina, L. V. [1 ]
机构：
[1] RAS, AM Prokhorov Gen Phys Inst, Moscow 119991, Russia
来源：
PHYSICA B-CONDENSED MATTER | 2009年 / 404卷 / 23-24期
关键词：
Ge quantum dots; Dense arrays; Defects; Scanning tunnelling microscopy; TRANSITION; PYRAMIDS; GROWTH; DOMES; BEAM;
D O I：
10.1016/j.physb.2009.08.118
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The defects of Ge quantum dot arrays formed at moderate temperatures on the Si(0 0 1) surface have been investigated by the ultra high vacuum scanning tunnelling microscope integrated with the molecular beam epitaxy chamber. A preliminary classification of the defects has been carried out. Morphological peculiarities of the defects have been studied. The surface densities of defects of different types have been determined. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：4719 / 4722
页数：4
相关论文
共 50 条
  • [11] Polarized Raman spectroscopy of multilayer Ge/Si(001) quantum dot heterostructures
    Perova, T.S. (perovat@tcd.ie), 1600, American Institute of Physics Inc. (96):
  • [12] Polarized Raman spectroscopy of multilayer Ge/Si(001) quantum dot heterostructures
    Baranov, AV
    Fedorov, AV
    Perova, TS
    Moore, RA
    Solosin, S
    Yam, V
    Bouchier, D
    Thanh, VL
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (05) : 2857 - 2863
  • [13] Atomic structure of Ge quantum dots on the Si(001) surface
    L. V. Arapkina
    V. A. Yuryev
    JETP Letters, 2010, 91 : 281 - 285
  • [14] Atomic Structure of Ge Quantum Dots on the Si(001) Surface
    Arapkina, L. V.
    Yuryev, V. A.
    JETP LETTERS, 2010, 91 (06) : 281 - 285
  • [15] Epitaxial Si encapsulation of highly misfitting SiC quantum dot arrays formed on Si (001)
    Petz, C. W.
    Yang, D.
    Myers, A. F.
    Levy, J.
    Floro, J. A.
    APPLIED PHYSICS LETTERS, 2014, 104 (01)
  • [16] Impact of template variations on shape and arrangement of Si/Ge quantum dot arrays
    Dais, C.
    Solak, H. H.
    Mueller, E.
    Gruetzmacher, D.
    APPLIED PHYSICS LETTERS, 2008, 92 (14)
  • [17] Multiscale modeling of point defects in Si-Ge(001) quantum wells
    Yang, B.
    Tewary, V. K.
    PHYSICAL REVIEW B, 2007, 75 (14)
  • [18] Ge-Si intermixing at the Ge/Si(001) surface
    Cho, JH
    Kang, MH
    PHYSICAL REVIEW B, 2000, 61 (03): : 1688 - 1691
  • [19] Quantum dot Ge/Si heterostructures
    Dvurechenskii, AV
    Yakimov, AI
    PHYSICS-USPEKHI, 2001, 44 (12) : 1304 - 1307
  • [20] Structure of Si-capped Ge/SiC/Si(001) epitaxial nanodots: Implications for quantum dot patterning
    Petz, C. W.
    Yang, D.
    Levy, J.
    Floro, J. A.
    APPLIED PHYSICS LETTERS, 2012, 100 (14)
12345