Focal photodetector arrays based on CdHgTe heteroepitaxial layers grown by molecular-beam epitaxy on GaAs substrates

被引：0

作者：

Vasil'ev, VV ^{[1
]}

Voinov, VG ^{[1
]}

Esaev, DG ^{[1
]}

Zakhar'yash, TI ^{[1
]}

Klimenko, AG ^{[1
]}

Kozlov, AI ^{[1
]}

Krymskii, AI ^{[1
]}

Marchishin, IV ^{[1
]}

Ovsyuk, VN ^{[1
]}

Romashko, LF ^{[1
]}

Svitashev, KK ^{[1
]}

Suslyakov, AO ^{[1
]}

Talipov, NK ^{[1
]}

Sidorov, YG ^{[1
]}

Varavin, VC ^{[1
]}

Dvoretskii, SA ^{[1
]}

Mikhailov, NN ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Siberian Sect, Novosibirsk 630090, Russia

来源：

JOURNAL OF OPTICAL TECHNOLOGY | 1998年 / 65卷 / 01期

关键词：

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

This paper describes a technology for fabricating photodetector arrays with a 32 X 32 and 128 X 128 format, based on HgCdTe/CdTe/GaAs heterostructure diodes grown by molecular-beam epitaxy. The technology is demonstrated for hybrid assembly with a multiplexer with continuous monitoring of the process of cold welding of indium posts. The threshold power of the elements of a photodetector device with a 128 X 128 format with a long-wavelength photosensitivity limit of 10.4 and 5.2 mu m equals 1.7 X 10(-13) and 1.1 x 10(-14) W/Hz(1/2), respectively. The noise-equivalent temperature difference in the frame field equalled 0.077 K when the background temperature was 293 K. (C) 1998 The Optical Society of America.

引用

页码：68 / 72

页数：5

共 50 条

[1] Focal photodetector arrays based on CdHgTe heteroepitaxial layers grown by molecular-beam epitaxy on GaAs substrates
Vasil'ev, V.V.
Voinov, V.G.
Esaev, D.G.
Zakhar'yash, T.I.
Klimenko, A.G.
Kozlov, A.I.
Krymskii, A.I.
Marchishin, I.V.
Ovsyuk, V.N.
Romashko, L.N.
Svitashev, K.K.
Suslyakov, A.O.
Talipov, N.Kh.
Sidorov, Yu.G.
Varavin, V.C.
Journal of Optical Technology (A Translation of Opticheskii Zhurnal), 1998, 65 (01): : 68 - 72
[2] Acceptor states in heteroepitaxial CdHgTe films grown by molecular-beam epitaxy
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[4] Photoreceivers on the base of CdHgTe layers grown by the method of molecular-beam epitaxy
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