Focal photodetector arrays based on CdHgTe heteroepitaxial layers grown by molecular-beam epitaxy on GaAs substrates

被引：0

作者：

Vasil'ev, VV ^{[1
]}

Voinov, VG ^{[1
]}

Esaev, DG ^{[1
]}

Zakhar'yash, TI ^{[1
]}

Klimenko, AG ^{[1
]}

Kozlov, AI ^{[1
]}

Krymskii, AI ^{[1
]}

Marchishin, IV ^{[1
]}

Ovsyuk, VN ^{[1
]}

Romashko, LF ^{[1
]}

Svitashev, KK ^{[1
]}

Suslyakov, AO ^{[1
]}

Talipov, NK ^{[1
]}

Sidorov, YG ^{[1
]}

Varavin, VC ^{[1
]}

Dvoretskii, SA ^{[1
]}

Mikhailov, NN ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Siberian Sect, Novosibirsk 630090, Russia

来源：

JOURNAL OF OPTICAL TECHNOLOGY | 1998年 / 65卷 / 01期

关键词：

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

This paper describes a technology for fabricating photodetector arrays with a 32 X 32 and 128 X 128 format, based on HgCdTe/CdTe/GaAs heterostructure diodes grown by molecular-beam epitaxy. The technology is demonstrated for hybrid assembly with a multiplexer with continuous monitoring of the process of cold welding of indium posts. The threshold power of the elements of a photodetector device with a 128 X 128 format with a long-wavelength photosensitivity limit of 10.4 and 5.2 mu m equals 1.7 X 10(-13) and 1.1 x 10(-14) W/Hz(1/2), respectively. The noise-equivalent temperature difference in the frame field equalled 0.077 K when the background temperature was 293 K. (C) 1998 The Optical Society of America.

引用

页码：68 / 72

页数：5

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