Focal photodetector arrays based on CdHgTe heteroepitaxial layers grown by molecular-beam epitaxy on GaAs substrates

被引：0

作者：

Vasil'ev, V.V. ^{[1
]}

Voinov, V.G. ^{[1
]}

Esaev, D.G. ^{[1
]}

Zakhar'yash, T.I. ^{[1
]}

Klimenko, A.G. ^{[1
]}

Kozlov, A.I. ^{[1
]}

Krymskii, A.I. ^{[1
]}

Marchishin, I.V. ^{[1
]}

Ovsyuk, V.N. ^{[1
]}

Romashko, L.N. ^{[1
]}

Svitashev, K.K. ^{[1
]}

Suslyakov, A.O. ^{[1
]}

Talipov, N.Kh. ^{[1
]}

Sidorov, Yu.G. ^{[1
]}

Varavin, V.C. ^{[1
]}

机构：

[1] Russian Acad of Sciences, Novosibirsk, Russia

来源：

Journal of Optical Technology (A Translation of Opticheskii Zhurnal) | 1998年 / 65卷 / 01期

关键词：

Cold welding - Heterojunctions - Molecular beam epitaxy - Multiplexing equipment - Photosensitivity - Semiconducting cadmium compounds - Semiconducting gallium arsenide - Semiconductor device manufacture - Semiconductor diodes - Semiconductor growth - Substrates;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

This paper describes a technology for fabricating photodetector arrays with a 32×32 and 128×128 format, based on HgCdTe/CdTe/GaAs heterostructure diodes grown by molecular-beam epitaxy. The technology is demonstrated for hybrid assembly with a multiplexer with continuous monitoring of the process of cold welding of indium posts. The threshold power of the elements of a photodetector device with a 128×128 format with a long-wavelength photosensitivity limit of 10.4 and 5.2 μm equals 1.7×10-13 and 1.1×10-14 W/Hz1/2, respectively. The noise-equivalent temperature difference in the frame field equalled 0.077 K when the background temperature was 293 K.

引用

页码：68 / 72

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[1] Focal photodetector arrays based on CdHgTe heteroepitaxial layers grown by molecular-beam epitaxy on GaAs substrates
Vasil'ev, VV
Voinov, VG
Esaev, DG
Zakhar'yash, TI
Klimenko, AG
Kozlov, AI
Krymskii, AI
Marchishin, IV
Ovsyuk, VN
Romashko, LF
Svitashev, KK
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