Reviews and future prospects of low-voltage embedded RAMs

被引：6
|
作者：
Itoh, K [1 ]
Osada, K [1 ]
Kawahara, T [1 ]
机构：
[1] Hitachi Ltd, Cent Res Lab, Tokyo 1858601, Japan
来源：
PROCEEDINGS OF THE IEEE 2004 CUSTOM INTEGRATED CIRCUITS CONFERENCE | 2004年
关键词：
D O I：
10.1109/CICC.2004.1358816
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Low-voltage high-density embedded (e-) RAMs, focusing on RAM cells and peripheral circuits, are described. First,challenges and trends in low-voltage e-RAMs are described based on the S/N issue of RAM cells, and leakage and speed-variation issues of peripheral circuits. Next, state-of-the-art low-voltage e-DRAMs and e-SRAMs are investigated, focusing on leakage-reduction circuits. Finally, future prospects for e-RAM cells and peripheral circuits are discussed in terms of low-voltage designs.
引用
收藏
页码：339 / 344
页数：6
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