A low-voltage sense amplifier for high-performance embedded flash memory

被引：0
|
作者：
柳江 [1 ]
王雪强 [2 ]
王琴 [1 ]
伍冬 [2 ]
张志刚 [2 ]
潘立阳 [2 ]
刘明 [1 ]
机构：
[1] Institute of Microelectronics,Chinese Academy of Sciences
[2] Institute of Microelectronics,Tsinghua University
来源：
Journal of Semiconductors | 2010年 / 31卷 / 10期
基金：
国家高技术研究发展计划(863计划);
关键词：
sense amplifier; current mode; embedded flash memory; low voltage;
D O I：
暂无
中图分类号：
TP333.1 [内存贮器（主存贮器）总论];
学科分类号：
081201 ;
摘要：
This paper presents a sense amplifier scheme for low-voltage embedded flash(eFlash) memory applications. The topology of the sense amplifier is based on current mode comparison.Moreover,an offset-voltage elimination technique is employed to improve the sensing performance under a small memory cell current.The proposed sense amplifier is designed based on a GSMC 130 nm eFlash process,and the sense time is 0.43 ns at 1.5 V,corresponding to a 46%improvement over the conventional technologies.
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页码：74 / 78
页数：5
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