A low-voltage sense amplifier for high-performance embedded flash memory

被引：0

作者：

柳江 ^{[1
]}

王雪强 ^{[2
]}

王琴 ^{[1
]}

伍冬 ^{[2
]}

张志刚 ^{[2
]}

潘立阳 ^{[2
]}

刘明 ^{[1
]}

机构：

[1] Institute of Microelectronics,Chinese Academy of Sciences

[2] Institute of Microelectronics,Tsinghua University

来源：

Journal of Semiconductors | 2010年 / 31卷 / 10期

基金：

国家高技术研究发展计划(863计划);

关键词：

sense amplifier; current mode; embedded flash memory; low voltage;

D O I：

暂无

中图分类号：

TP333.1 [内存贮器（主存贮器）总论];

学科分类号：

081201 ;

摘要：

This paper presents a sense amplifier scheme for low-voltage embedded flash(eFlash) memory applications. The topology of the sense amplifier is based on current mode comparison.Moreover,an offset-voltage elimination technique is employed to improve the sensing performance under a small memory cell current.The proposed sense amplifier is designed based on a GSMC 130 nm eFlash process,and the sense time is 0.43 ns at 1.5 V,corresponding to a 46%improvement over the conventional technologies.

引用

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页码：74 / 78

页数：5

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