A high-performance very low-voltage current sense amplifier for nonvolatile memories

被引：34
|
作者：
Conte, A [1 ]
Lo Giudice, G
Palumbo, G
Signorello, A
机构：
[1] ST Microelect, MPG Grp, I-95121 Catania, Italy
[2] Catania Univ, DIEES, I-95121 Catania, Italy
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2005年 / 40卷 / 02期
关键词：
current mode; EEPROM; low voltage; nonvolatile memory; sense amplifier; smart card;
D O I：
10.1109/JSSC.2004.840985
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high-performance sense amplifier for nonvolatile memories capable of working under a very low-voltage power supply is presented. The topology of the sense amplifier uses a pure current-mode comparison. allowing power supplies lower than 1 V to be used and includes two subcircuits which improve slew rate performance. The sense amplifier was implemented in an EEPROM realized with a 0.18-mum EEPROM technology. Experimental results showed a read access time of about 30 ns with a power supply of 1.65 V.
引用
收藏
页码：507 / 514
页数：8
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