Reviews and future prospects of low-voltage embedded RAMs

被引：6

作者：

Itoh, K ^{[1
]}

Osada, K ^{[1
]}

Kawahara, T ^{[1
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, Tokyo 1858601, Japan

来源：

PROCEEDINGS OF THE IEEE 2004 CUSTOM INTEGRATED CIRCUITS CONFERENCE | 2004年

关键词：

D O I：

10.1109/CICC.2004.1358816

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Low-voltage high-density embedded (e-) RAMs, focusing on RAM cells and peripheral circuits, are described. First,challenges and trends in low-voltage e-RAMs are described based on the S/N issue of RAM cells, and leakage and speed-variation issues of peripheral circuits. Next, state-of-the-art low-voltage e-DRAMs and e-SRAMs are investigated, focusing on leakage-reduction circuits. Finally, future prospects for e-RAM cells and peripheral circuits are discussed in terms of low-voltage designs.

引用

页码：339 / 344

页数：6

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