Extraordinarily high drive currents in asymmetrical double-gate MOSFETs

被引：7
|
作者：
Fossum, JG [1 ]
Ren, ZB
Kim, K
Lundstrom, M
机构：
[1] Univ Florida, Gainesville, FL 32611 USA
[2] Purdue Univ, W Lafayette, IN 47907 USA
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2000年 / 28卷 / 5-6期
关键词：
double-gate MOSFET; scaled CMOS; quantum effects; charge coupling;
D O I：
10.1006/spmi.2000.0957
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Numerical simulation results derived from a Schrodinger-Poisson tool applied to scaled double-gate (DG) MOSFETs, supplemented by analytical characterizations of the pertinent physics, are presented to give insight concerning the near-ideal features of DG devices and to explain how the low-voltage drive current of the asymmetrical DG MOSFET, having only one predominant channel, can be comparable to, and even higher than, that of the symmetrical-gate counterpart designed to have the same off-state current. (C) 2000 Academic Press.
引用
收藏
页码：525 / 530
页数：6
相关论文
共 50 条
  • [11] Top contacts for vertical double-gate MOSFETs
    Moers, J
    Trellenkamp, S
    Goryll, M
    Marso, A
    van der Hart, A
    Hogg, S
    Mantl, S
    Kordos, P
    Lüth, H
    MICROELECTRONIC ENGINEERING, 2002, 64 (1-4) : 465 - 471
  • [12] SCALING THEORY FOR DOUBLE-GATE SOI MOSFETS
    SUZUKI, K
    TANAKA, T
    TOSAKA, Y
    HORIE, H
    ARIMOTO, Y
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (12) : 2326 - 2329
  • [13] Role of the extensions in Double-Gate Junctionless MOSFETs in the drain current at high gate voltage
    Cerdeira, Antonio
    Avila Herrera, Fernando
    Paz, Bruna Cardoso
    Estrada, Magali
    Pavanello, Marcelo Antonio
    2015 30TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO), 2015,
  • [14] Explicit model for the gate tunneling current in double-gate MOSFETs
    Chaves, Ferney
    Jimenez, David
    Sune, Jordi
    SOLID-STATE ELECTRONICS, 2012, 68 : 93 - 97
  • [15] A simulation analysis of FIBL in decananometer Double-Gate MOSFETs with high-κ gate dielectrics
    Autran, JL
    Munteanu, D
    Bescond, M
    Houssa, M
    Said, A
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2005, 351 (21-23) : 1897 - 1901
  • [16] Analytical threshold voltage model for short-channel asymmetrical dual-gate material double-gate MOSFETs
    Tsormpatzoglou, A.
    Pappas, I.
    Tassis, D. H.
    Dimitriadis, C. A.
    Ghibaudo, G.
    MICROELECTRONIC ENGINEERING, 2012, 90 : 9 - 11
  • [17] Study of performance and leakage currents in nanometer-scale bulk, SOI and double-gate MOSFETs
    Sudarshan Narayanan
    C. Sachs
    M. V. Fischetti
    Journal of Computational Electronics, 2008, 7 : 24 - 27
  • [18] Study of performance and leakage currents in nanometer-scale bulk, SOI and double-gate MOSFETs
    Narayanan, Sudarshan
    Sachs, C.
    Fischetti, M. V.
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2008, 7 (01) : 24 - 27
  • [19] Investigation of gate-induced drain leakage (GIDL) current in thin body devices: Single-gate ultra-thin body, symmetrical double-gate, and asymmetrical double-gate MOSFETs
    Choi, YK
    Ha, D
    King, TJ
    Bokor, J
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (4B): : 2073 - 2076
  • [20] Investigation of gate-induced drain leakage (GIDL) current in thin body devices: Single-gate ultra-thin body, symmetrical double-gate, and asymmetrical double-gate MOSFETs
    Choi, Y.-K. (ykchoi@eecs.berkeley.edu), 1600, Japan Society of Applied Physics (42):
12345