Band structure and optical gain in InGaAsN/GaAs and InGaAsN/GaAsN quantum wells

被引：6
|
作者：
Marie, X
Barrau, J
Amand, T
Carrère, H
Arnoult, A
Fontaine, C
Bedel-Pereira, E
机构：
[1] CNRS, LPMC, INSA, F-31077 Toulouse 4, France
[2] CNRS, LAAS, F-31077 Toulouse 4, France
来源：
IEE PROCEEDINGS-OPTOELECTRONICS | 2003年 / 150卷 / 01期
关键词：
D O I：
10.1049/ip-opt:20030187
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The band structure of InGaAsN/GaAs and InGaAsN/GaAsN strained quantum wells has been calculated using the band anticrossing model and an eight-band k(.)p Hamiltonian. The calculated interband optical transition energies have been compared to the experimental ones deduced from photocurrent spectroscopy experiments. Optical dipole moments for the interband optical transitions and the dependence of the optical gain spectra on injected carrier density have been computed.
引用
收藏
页码：25 / 27
页数：3
相关论文
共 50 条
  • [41] Methods of controlling the emission wavelength in InAs/GaAsN/InGaAsN heterostructures on GaAs substrates
    V. V. Mamutin
    A. Yu. Egorov
    N. V. Kryzhanovskaya
    V. S. Mikhrin
    A. M. Nadtochy
    E. V. Pirogov
    [J]. Semiconductors, 2008, 42 : 805 - 812
  • [42] Effect of annealing on the In and N distribution in InGaAsN quantum wells
    Albrecht, M
    Grillo, V
    Remmele, T
    Strunk, HP
    Egorov, AY
    Dumitras, G
    Riechert, H
    Kaschner, A
    Heitz, R
    Hoffmann, A
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (15) : 2719 - 2721
  • [43] In situ determination of nitrogen content in InGaAsN quantum wells
    Reentila, O.
    Mattila, M.
    Knuuttila, L.
    Hakkarainen, T.
    Sopanen, M.
    Lipsanen, H.
    [J]. JOURNAL OF APPLIED PHYSICS, 2006, 100 (01)
  • [44] Methods of controlling the emission wavelength in InAs/GaAsN/InGaAsN heterostructures on GaAs substrates
    Mamutin, V. V.
    Egorov, A. Yu.
    Kryzhanovskaya, N. V.
    Mikhrin, V. S.
    Nadtochy, A. M.
    Pirogov, E. V.
    [J]. SEMICONDUCTORS, 2008, 42 (07) : 805 - 812
  • [45] Determination of the carrier concentration in InGaAsN/GaAs single quantum wells using Raman scattering
    Grandt, PA
    Griffith, AE
    Manasreh, MO
    Friedman, DJ
    Dogan, S
    Johnstone, D
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (21) : 4905 - 4907
  • [46] Optical properties of strain-compensated InAs/InGaAsN/GaAsN superlattices
    V. V. Mamutin
    O. V. Bondarenko
    A. P. Vasil’ev
    A. G. Gladyshev
    A. Yu. Egorov
    N. V. Kryzhanovskaya
    V. S. Mikhrin
    V. M. Ustinov
    [J]. Technical Physics Letters, 2007, 33 : 384 - 387
  • [47] Annealing effects on InGaAsN/GaAs quantum wells analyzed using thermally detected optical absorption and ten band k-p calculations
    Bouragba, T.
    Mihailovic, M.
    Reveret, F.
    Disseix, P.
    Leymarie, J.
    Vasson, A.
    Damilano, B.
    Hugues, M.
    Massies, J.
    Duboz, J. Y.
    [J]. JOURNAL OF APPLIED PHYSICS, 2007, 101 (07)
  • [48] Microphotoluminescence characterization of alloy fluctuations in InGaAsN/GaAs quantum wells emitting at 1.3 μm
    Frassanito, M. C.
    De Giorgi, M.
    Rinaldi, R.
    Cingolani, R.
    Rubini, S.
    Piccin, M.
    Cristofoli, A.
    Bais, G.
    Martelli, F.
    Carlino, E.
    Franciosi, A.
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (08) : 1207 - 1211
  • [49] Optical characterization of improvement of carrier localization in InGaAsN/GaAs single quantum wells by addition of Sb flux to interfaces
    Iguchi, Y.
    Ishizuka, T.
    Yamada, T.
    Takagishi, S.
    Nomura, K.
    Nakayama, M.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2007, 298 (540-543) : 540 - 543
  • [50] Effect of nitrogen contents on the temperature dependence of photoluminescence in InGaAsN/GaAs single quantum wells
    Lai, Fang-I
    Kuo, S. Y.
    Wang, J. S.
    Kuo, H. C.
    Wang, S. C.
    Wang, H. S.
    Liang, C. T.
    Chen, Y. F.
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2006, 24 (04): : 1223 - 1227
12345