Microphotoluminescence characterization of alloy fluctuations in InGaAsN/GaAs quantum wells emitting at 1.3 μm

被引：0

作者：

Frassanito, M. C.

De Giorgi, M.

Rinaldi, R.

Cingolani, R.

Rubini, S.

Piccin, M.

Cristofoli, A.

Bais, G.

Martelli, F.

Carlino, E.

Franciosi, A.

机构：

[1] CNR, INFM, Natl Nanotechnol Lab, I-73100 Lecce, Italy

[2] INFM, Lab Nazl TASC, I-34012 Trieste, Italy

[3] Univ Trieste, Ctr Excellence Nanostructured Mat, I-34127 Trieste, Italy

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2006年 / 21卷 / 08期

关键词：

D O I：

10.1088/0268-1242/21/8/038

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Microphotoluminescence studies of annealed In( x) Ga( 1 - x) N( y) As( 1 - y)/ GaAs quantum wells fabricated by molecular beam epitaxy for optical emission in the 1.3 mu m spectral range revealed several sharp peaks about 2 - 7 meV wide in the emission spectra. The intensity of the discrete lines decreased strongly with increasing lattice temperature and was absent in as-grown ( unannealed) quantum wells. Such quantum dot-like emission lines are attributed to the recombination of excitons strongly localized at alloy fluctuations composed of In-N-rich clusters.

引用

页码：1207 / 1211

页数：5

共 50 条

[1] Optically-detected microwave resonance in InGaAsN/GaAs quantum wells and InAs/GaAs quantum dots emitting around 1.3 μm
Baranov, P. G.
Romanov, N. G.
Preobrazhenski, V. L.
Egorov, A. Yu.
Ustinov, V. M.
Sobolev, M. M.
[J]. INTERNATIONAL JOURNAL OF NANOSCIENCE, VOL 2, NO 6, 2003, 2 (06): : 469 - 478
[2] 1.3 μm InGaAsN quantum well vertical cavity surface emitting lasers on GaAs substrates
Klem, JF
Choquette, KD
Fischer, AJ
Blum, O
Geib, KM
Naone, RL
Galt, D
[J]. LEOS 2000 - IEEE ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS. 1 & 2, 2000, : 127 - 128
[3] Optical characterization of strained InGaAsN/GaAs multiple quantum wells
Héroux, JB
Yang, X
Wang, WI
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (03): : 1154 - 1157
[4] Al contamination in InGaAsN quantum wells grown by metalorganic chemical vapor deposition and 1.3 μm InGaAsN vertical cavity surface emitting lasers
Takeuchi, T
Chang, YL
Leary, M
Mars, D
Song, YK
Roh, SD
Luan, HC
Mantese, LM
Tandon, A
Twist, R
Belov, S
Bour, D
Tan, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (4A): : 1260 - 1263
[5] Comparison of GaInNAs/GaAs and GaInNAs/GaNAs/GaAs quantum wells emitting over 1.3 μm wavelength
Li, LH
Patriarche, G
Lemaitre, A
Largeau, L
Travers, L
Harmand, JC
[J]. JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) : 403 - 407
[6] The optical properties of heterostructures with quantum-confined InGaAsN layers on a GaAs substrate and emitting at 1.3–1.55 μm
N. V. Kryzhanovskaya
A. Yu. Egorov
V. V. Mamutin
N. K. Polyakov
A. F. Tsatsul’nikov
A. R. Kovsh
N. N. Ledentsov
V. M. Ustinov
D. Bimberg
[J]. Semiconductors, 2005, 39 : 703 - 708
[7] Dilute nitride InGaAsN/GaAs V-groove quantum wires emitting at 1.3 μm wavelength at room temperature
Carron, R.
Fekete, D.
Gallo, P.
Dwir, B.
Rudra, A.
Felici, M.
Bartova, B.
Cantoni, M.
Kapon, E.
[J]. APPLIED PHYSICS LETTERS, 2011, 99 (10)
[8] The optical properties of heterostructures with quantum-confined InGaAsN layers on a GaAs substrate and emitting at 1.3-1.55 μm
Kryzhanovskaya, NV
Egorov, AY
Mamutin, VV
Polyakov, NK
Tsatsul'nikov, AF
Kovsh, AR
Ledentsov, NN
Ustinov, VM
Bimberg, D
[J]. SEMICONDUCTORS, 2005, 39 (06) : 703 - 708
[9] Intersubband transitions in InGaAsN/GaAs quantum wells
Liu, W.
Zhang, D. H.
Fan, W. J.
Hou, X. Y.
Jiang, Z. M.
[J]. JOURNAL OF APPLIED PHYSICS, 2008, 104 (05)
[10] Interdiffusion in narrow InGaAsN/GaAs quantum wells
Liu, W.
Zhang, H.
Huang, Z. M.
Wang, S. Z.
Yoon, S. F.
Fan, W. J.
Liu, C. J.
Wee, A. T. S.
[J]. JOURNAL OF APPLIED PHYSICS, 2007, 101 (10)

← 1 2 3 4 5 →