Interdiffusion in narrow InGaAsN/GaAs quantum wells

被引：20
|
作者：
Liu, W.
Zhang, H. [1 ]
Huang, Z. M.
Wang, S. Z.
Yoon, S. F.
Fan, W. J.
Liu, C. J.
Wee, A. T. S.
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[2] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore
来源：
JOURNAL OF APPLIED PHYSICS | 2007年 / 101卷 / 10期
关键词：
D O I：
10.1063/1.2736943
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Interdiffusion in In0.32Ga0.68As0.984N0.016/GaAs multiple quantum wells with well widths of 2 and 4 nm, respectively, was investigated both experimentally and theoretically. Maximum blueshifts of 206 and 264 meV in the photoluminescence spectra were observed. Secondary ion mass spectrometry showed that both In-Ga and N-As interdiffusions played key roles for the large blueshifts. The significant In-Ga interdiffusion occurred at 650 degrees C while the N diffusion occurred at a temperature above 700 degrees C. The theoretical results are in good agreement with the experimental observations. (c) 2007 American Institute of Physics.
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页数：6
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