Band structure and optical gain in InGaAsN/GaAs and InGaAsN/GaAsN quantum wells

被引：6

作者：

Marie, X

Barrau, J

Amand, T

Carrère, H

Arnoult, A

Fontaine, C

Bedel-Pereira, E

机构：

[1] CNRS, LPMC, INSA, F-31077 Toulouse 4, France

[2] CNRS, LAAS, F-31077 Toulouse 4, France

来源：

IEE PROCEEDINGS-OPTOELECTRONICS | 2003年 / 150卷 / 01期

关键词：

D O I：

10.1049/ip-opt:20030187

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The band structure of InGaAsN/GaAs and InGaAsN/GaAsN strained quantum wells has been calculated using the band anticrossing model and an eight-band k(.)p Hamiltonian. The calculated interband optical transition energies have been compared to the experimental ones deduced from photocurrent spectroscopy experiments. Optical dipole moments for the interband optical transitions and the dependence of the optical gain spectra on injected carrier density have been computed.

引用

页码：25 / 27

页数：3

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