On the Transient Response of a Complementary (npn plus pnp) SiGe HBT BiCMOS Technology

被引：14
|
作者：
Lourenco, Nelson E. [1 ]
Fleetwood, Zachary E. [1 ]
Jung, Seungwoo [1 ]
Cardoso, Adilson S. [1 ]
Chakraborty, Partha S. [1 ]
England, Troy D. [2 ]
Roche, Nicolas J. -H. [3 ]
Khachatrian, Ani [4 ]
McMorrow, Dale [5 ]
Buchner, Stephen P. [5 ]
Melinger, Joseph S. [5 ]
Warner, Jeffrey H. [5 ]
Paki, Pauline [6 ]
Kaynak, Mehmet [7 ]
Tillack, Bernd [7 ]
Knoll, Dieter [7 ]
Cressler, John D. [1 ]
机构：
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
[2] Sandia Natl Labs, Albuquerque, NM 87123 USA
[3] George Washington Univ, Washington, DC 20052 USA
[4] Sotera Def, Annapolis Jct, MD 20701 USA
[5] Naval Res Lab, Washington, DC 20052 USA
[6] Def Threat Reduct Agcy, Ft Belvoir, VA 22060 USA
[7] IHP Microelect, D-15236 Frankfurt, Germany
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2014年 / 61卷 / 06期
关键词：
C-SiGe; charge collection; complementary bipolar; complementary-SiGe; nanoTCAD; PNP heterojunction bipolar transistors; radiation hardening; SiGe HBT; silicon-germanium technology; single-event effects (SEE); single-event transient (SET); DESIGNING ELECTRONIC SYSTEMS; PROTON TOLERANCE; PART-I; CIRCUITS; 4TH-GENERATION; MITIGATION; OPERATION; LOGIC;
D O I：
10.1109/TNS.2014.2361269
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The single-event transient (SET) response of a third-generation bulk C-SiGe (npn + pnp) BiCMOS platform is investigated for the first time. Pulsed-laser, two-photon absorption experiments show that the pnp SiGe heterojunction bipolar transistor (SiGe HBT) exhibits a significant reduction in sensitive area as well as an improved transient response compared with the npn SiGe HBT. Ion-strike simulations on 3-D TCAD, C-SiGe HBT models agree with experimental findings, showing a reduction in overall transient duration and collected charge for the pnp SiGe HBT. These improvements in device-level SETs are attributed to the n-well isolation layer present in the vertical material stack of the pnp HBT. These results suggest that precision analog, RF/mm-wave, and high-speed digital applications utilizing unhardened, high-performance bulk pnp SiGe HBTs should benefit from an inherently improved SEE response.
引用
收藏
页码：3146 / 3153
页数：8
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