The effects of X-ray and proton irradiation on a 200 GHz/90 GHz complementary (npn+pnp) SiGe:C HBT technology

被引：17
|
作者：
Diestelhorst, Ryan M. [1 ]
Finn, Steven [1 ]
Jun, Bongim [2 ,3 ]
Sutton, Akil K. [1 ]
Cheng, Peng [1 ]
Marshall, Paul W. [4 ]
Cressler, John D. [1 ]
Schrimpf, Ronald D. [5 ]
Fleetwood, Daniel M. [5 ]
Gustat, Hans [6 ]
Heinemann, Bernd [6 ]
Fischer, Gerhard G. [6 ]
Knoll, Dieter [6 ]
Tillack, Bernd [6 ]
机构：
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
[2] Georgia Inst Technol, Atlanta, GA 30332 USA
[3] Boeing Corp, Sylmar, CA 91342 USA
[4] NASA, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA
[5] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA
[6] IHP Microelect, D-15236 Frankfurt, Germany
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2007年 / 54卷 / 06期
关键词：
complementary bipolar; heterojunction bipolar transistors; radiation effects; SiGeHBT; silicon-germanium;
D O I：
10.1109/TNS.2007.907869
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigate the effects of both X-ray and proton irradiation on a novel 200 GHz/90 GHz (npn/pnp) complementary SiGe:C HBT technology. The dc forward mode total dose tolerance of the pup HBTs is shown to exceed that of the npn HBTs by a significant margin after being subjected to both 63-MeV proton and 10-keV X-ray sources, while the ac characteristics of both devices exhibit no degradation up to X-ray doses as high as 1.8 Mrad(SiO2). Pre- and post-irradiation results from a current feedback operational amplifier implemented in this technology and irradiated up to a dose of 1.8 Mrad(SiO2) are presented, showing no degradation in performance metrics under two low current density bias configurations.
引用
收藏
页码：2190 / 2195
页数：6
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