A complementary BiCMOS technology with high speed npn and pnp SiGe:: CHBTs

被引：0

作者：

Heinemann, B ^{[1
]}

Barth, R ^{[1
]}

Bolze, D ^{[1
]}

Drews, J ^{[1
]}

Formanek, P ^{[1
]}

Fursenko, O ^{[1
]}

Glante, M ^{[1
]}

Glowatzki, K ^{[1
]}

Gregor, A ^{[1
]}

Haak, U ^{[1
]}

Höppner, W ^{[1
]}

Knoll, D ^{[1
]}

Kurps, R ^{[1
]}

Marschmeyer, S ^{[1
]}

Orlowski, S ^{[1
]}

Rücker, H ^{[1
]}

Schley, P ^{[1
]}

Schmidt, D ^{[1
]}

Scholz, R ^{[1
]}

Winkler, W ^{[1
]}

Yamamoto, Y ^{[1
]}

机构：

[1] IHP, D-15236 Frankfurt, Oder, Germany

来源：

2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST | 2003年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We demonstrate SiGe:C pnp HBTs in a complementary bipolar CMOS flow with f(T)/f(max) values of 80GHz/120GHz at BVCEO = 2.6V and a ring oscillator delay of 8.9ps. The simultaneously fabricated npn HBTs sustain no significant performance loss compared to the npn-only BiCMOS confirmed by f(T)/f(max) values of 180GHz/185GHz and a ring oscillator delay of 4.6ps. A pnp-only BiCMOS flow produces peak fT/fmax values for pnp devices of 115GHz/115GHz. The high speed performance of the pnp transistors surpasses the best reported values of this transistor type substantially.

引用

页码：117 / 120

页数：4

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