On the Transient Response of a Complementary (npn plus pnp) SiGe HBT BiCMOS Technology

被引：14

作者：

Lourenco, Nelson E. ^{[1
]}

Fleetwood, Zachary E. ^{[1
]}

Jung, Seungwoo ^{[1
]}

Cardoso, Adilson S. ^{[1
]}

Chakraborty, Partha S. ^{[1
]}

England, Troy D. ^{[2
]}

Roche, Nicolas J. -H. ^{[3
]}

Khachatrian, Ani ^{[4
]}

McMorrow, Dale ^{[5
]}

Buchner, Stephen P. ^{[5
]}

Melinger, Joseph S. ^{[5
]}

Warner, Jeffrey H. ^{[5
]}

Paki, Pauline ^{[6
]}

Kaynak, Mehmet ^{[7
]}

Tillack, Bernd ^{[7
]}

Knoll, Dieter ^{[7
]}

Cressler, John D. ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[2] Sandia Natl Labs, Albuquerque, NM 87123 USA

[3] George Washington Univ, Washington, DC 20052 USA

[4] Sotera Def, Annapolis Jct, MD 20701 USA

[5] Naval Res Lab, Washington, DC 20052 USA

[6] Def Threat Reduct Agcy, Ft Belvoir, VA 22060 USA

[7] IHP Microelect, D-15236 Frankfurt, Germany

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2014年 / 61卷 / 06期

关键词：

C-SiGe; charge collection; complementary bipolar; complementary-SiGe; nanoTCAD; PNP heterojunction bipolar transistors; radiation hardening; SiGe HBT; silicon-germanium technology; single-event effects (SEE); single-event transient (SET); DESIGNING ELECTRONIC SYSTEMS; PROTON TOLERANCE; PART-I; CIRCUITS; 4TH-GENERATION; MITIGATION; OPERATION; LOGIC;

D O I：

10.1109/TNS.2014.2361269

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The single-event transient (SET) response of a third-generation bulk C-SiGe (npn + pnp) BiCMOS platform is investigated for the first time. Pulsed-laser, two-photon absorption experiments show that the pnp SiGe heterojunction bipolar transistor (SiGe HBT) exhibits a significant reduction in sensitive area as well as an improved transient response compared with the npn SiGe HBT. Ion-strike simulations on 3-D TCAD, C-SiGe HBT models agree with experimental findings, showing a reduction in overall transient duration and collected charge for the pnp SiGe HBT. These improvements in device-level SETs are attributed to the n-well isolation layer present in the vertical material stack of the pnp HBT. These results suggest that precision analog, RF/mm-wave, and high-speed digital applications utilizing unhardened, high-performance bulk pnp SiGe HBTs should benefit from an inherently improved SEE response.

引用

页码：3146 / 3153

页数：8

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