Optimizing Fin Aspect Ratio of Junctionless bulk FinFET for Application in Analog/RF Circuit

MOSFET devices with multiple gates are well appropriate for low-voltage operation because of its superior performance against Short Channel Effects (SCEs) and better gate controllability. FinFET is considered as one of the promising device. However, Fin geometry has a big impact on its performance. In this paper, an analysis on the effect of Fin structure parameter like Fin aspect ratio (Fin height/Fin width) on the Analog/RF performance of the Junctionless FinFET is presented for its SoC application. Different important output parameters such as OFF current (I-OFF), ON current (I-ON), I-ON/I-OFF current ratio, Transconductance (gm), Transconductance Generation Factor (gm/Ids), Cut-off Frequency (f(T)) and Maximum frequency of oscillation (f(max)) have been analyzed using TCAD device simulator. From the analysis it is established that the device presented in this work shows better I-ON, I-OFF, I-ON/I-OFF, Transconductance, and Transconductance generation factor if Fin structure having higher aspect ratio is used. However, slight decrement in f(T) and f(max) are noticed when the Fin aspect ratio is high. Findings of this work will be helpful for design of devices for its specific applications.